HotLeakage: A Temperature-Aware Model of Subthreshold and Gate Leakage for Architects
نویسندگان
چکیده
This report introduces HotLeakage, an architectural model for subthreshold and gate leakage that we have developed here at the University of Virginia. The most important features of HotLeakage are the explicit inclusion of temperature, voltage, gate leakage, and parameter variations, and the ability to recalculate leakage currents dynamically as temperature and voltage change due to operating conditions, DVS techniques, etc. HotLeakage provides default settings for 180nm through 70nm technologies for modeling cache and register files, and provides a simple interface for selecting alternate parameter values and for modeling alternative microarchitecture structures. It also provides models for several extant cache leakage control techniques, with an interface for adding further techniques. HotLeakage is currently a semi-independent module for use with SimpleScalar, but is sufficiently modular that it should be fairly easy to port to other simulators. Because sub-threshold leakage currents are exponentially dependent on temperature and voltage, because gate leakage is growing so rapidly, and because parameter variations can have a profound effect on simulation accuracy, we hope that HotLeakage will serve as a useful tool for microarchitects to more accurately evaluate issues related leakage power. HotLeakage is available for download at http://lava.cs.virginia.edu/HotLeakage
منابع مشابه
A Novel Hybrid Nano Scale MOSFET Structure for Low Leak Application
In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...
متن کاملComparison of State-Preserving vs. Non-State-Preserving Leakage Control in Caches
This paper compares the effectiveness of state-preserving and non-state-preserving techniques for leakage control in caches by comparing drowsy cache and gated-V for data caches using 70nm technology parameters. To perform the comparison, we use “HotLeakage”, a new architectural model for subthreshold and gate leakage that explicitly models the effects of temperature, voltage, and parameter var...
متن کاملBand bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...
متن کاملBand bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...
متن کاملProcess Variation-Aware Estimation of Static Leakage Power in Nano CMOS
We present a statistical methodology for leakage power estimation, due to subthreshold and gate tunneling leakage, in the presence of process variations, for 65 nm CMOS. The circuit leakage power variations is analyzed by Monte Carlo (MC) simulations, by characterizing NAND gate library. A statistical “hybrid model” is proposed, to extend this methodology to a generic library. We demonstrate th...
متن کامل